600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
F2N60
2.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC F2N60 is a N-Channel enhanc...
Description
UNISONIC TECHNOLOGIES CO., LTD
F2N60
2.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
F2N60L-TN3-T
F2N60G-TN3-T
F2N60L-TN3-R
F2N60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube Tape Reel
F2N60G-TN3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) R: Tape Reel (2) TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-952.B
F2N60
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-952.B
F2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless o...
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