FGW75N60H

http://www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Symbols VCES VGES DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area IC@25 IC@100 ICP - Short Circuit Withstand Time tSC Maximum Power Dissipation PD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 600 ±20 100 75 225 225 5 500 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C, Tj=150°C Note *1 A TC=100°C, Tj=150°C A Note *2 A VCE≤600V, Tj≤175°C μs VCC≤300V, VGE=12V Tj≤150°C W TC=25°C °C °C Note *1 : Current value limited by bonding wire. Note *2 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time...