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SDD120 Diode-Diode Modules Type SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") Symbol Test Conditions IFRMS IFAVM IFSM i2dt TVJ=TVJM TC=105oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 T.
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD120 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and a.
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