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MJE3055T

Complementary Power Transistors

Description

MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: Power dissipation-PD = 75W at TC = 25°C. DC current gain hFE = 20 (Minimum) at IC = 4.0A. VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter...

Multicomp

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