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MJE2955T

Part Number	MJE2955T
Manufacturer	Multicomp
Description	Complementary Power Transistors
Published	Feb 21, 2015
Detailed Description	MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-...
Datasheet	MJE2955T PDF File

Overview

MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.
Features: • Power dissipation-PD = 75W at TC = 25°C.
• DC current gain hFE = 20 (Minimum) at IC = 4.
0A.
• VCE(sat) = 1.
1V (Maximum) at IC = 4.
0A, IB = 400mA.
Pin 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Case).
Dimensions Minimum Maximum A 14.
68 15.
31 B 9.
78 10.
42 C 5.
01 6.
52 D 13.
06 14.
62 E 3.
57 4.
07 F 2.
42 3.
66 G 1.
12 1.
36 H 0.
72 0.
96 I 4.
22 4.
98 J 1.
14 1.
38 K 2.
20 2.
97 L 0.
33 0.
55 M 2.
48 2.
98 O 3.
70 3.
90 Dimensions : Millimetres PNP MJE2955T NPN MJE3055T 10 Ampere Complemetary Silicon Power Transis...

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