RB085BM-90

Schottky Barrier Diode RB085BM-90 lApplication General Rectification lDimensions (Unit : mm) Data Sheet lLand size figure (Unit : mm) 6.0 3.0 2.0 6.0 lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF lConstruction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lTaping specifications (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStructure (2) Cathode (1) (3) Anode Anode lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Limits Unit Conditions Repetitive Peak Reverse Voltage VRM 90 V Duty≦0.5 Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating Junction Temperature VR Io IFSM Tj 90 V Direct Reverse Voltage 10 A 60Hz half sin Wave resistive load, Tc=98°C max., 1/2 Io per diode 50 A 60Hz half sin wave, Non-repetitive at Ta=25ºC, per diode 150 °C - Storage Temperature Tstg -40 to +150 °C - lElectrical characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF - - 0.83 V IF=5.0A IR - - 0.15 mA VR=90V Thermal Resistance Rth(j-c) - - 6.0 °C / W Junction to Case www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.10 - Rev.A RB085BM-90 lElectrical characteristic curves Data Sheet FORWARD CURRENT : IF(A) 10 Tj = 150°C 1 Tj = 125°C Tj = 75°C 0.1 Tj = 25°C Tj = -25°C 0.01 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REV...