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HBR3040

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR3040 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 40 V 175 ℃ 0.63V (...


Jilin Sino

HBR3040

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R SCHOTTKY BARRIER DIODE HBR3040 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 40 V 175 ℃ 0.63V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-220HF TO-22OF TO-3PB ORDER MESSAGE Order codes Marking Package HBR3040Z HBR3040 TO-220 HBR3040ZR HBR3040 TO-220 HBR3040F HBR3040 TO-220F HBR3040FR HBR3040 TO-220F HBR3040HF HBR3040 TO-220HF HBR3040HFR HBR3040 TO-220HF HBR3040AB HBR3040 TO-3PB HBR3040ABR HBR3040 TO-3PB Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) (Rev.):201003H 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220, TO-3PB) TC=125℃ (TO-220F TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR3040 Value 40 Unit V 40 V 30 A 15 275 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERI...




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