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BD636

Part Number	BD636
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Feb 18, 2015
Detailed Description	isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter B...
Datasheet	BD636 PDF File

Overview

isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.
) ·Complement to Type BD635 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ ...

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