TTW3C115N16

Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT W3C 115 N 16 (ISOPACK) N W3 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Datenblatt gilt auch für TDW3H115N16 Datasheet also valid for TDW3H115N16 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C...Tvj max repetitive peak forward off-state and reverse voltages VDRM, VRRM 1600 V Vorwärts-Stoßspitzensperrspannung non-repetitive peak forward off-state voltage Tvj = - 40°C...Tvj max VDSM 1600 V V Rückwärts-Stoßspitzensperrspannung non-repetitive peak reverse voltage Tvj = + 25°C...Tvj max VRSM 1700 V Durchlaßstrom-Grenzeffektivwert (pro Element) RMS on-state current (per chip) ITRMSM 100 A Effektivstrom (pro Phase) RMS current (per arm) TC = 85°C TC = 73°C TA = 45°C, KM 11 TA = 45°C, KM 33 TA = 35°C, KM 14 (VL = 45l/s) TA = 35°C, KM 33 (VL = 90l/s) IRMS 115 A 141 A 38 A 55 A 97 A 115 A Stoßstrom-Grenzwert surge current Tvj = 25°C, tp = 10ms Tvj = Tvj max, tp = 10ms ITSM 1000 A 870 A Grenzlastintegral I²t-value Tvj = 25°C, tp = 10ms Tvj = Tvj max, tp = 10ms I²t 5000 A²s 3780 A²s Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 (di/dt)cr f = 50Hz, iGM = 0,6A, diG/dt = 0,6A/µs 120 A/µs Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj max, vD = 0,67 VDRM 8. Kennbuchstabe / 8th letter F (dv/dt)cr 1000 V/µs Ch...