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B963-Z

NEC

2SB963-Z

Description
DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits. FEATURES High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 ...

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