D669

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings 2SD669 180 120 5 1.5 3 1 20 150 –55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — Emitter to base breakdown voltage V(BR)EBO 5 —— 5 —— Collector cutoff current ICBO DC current transfer ratio hFE1*1 hFE2 Collector to emitter saturation voltage VCE(sat) —— 60 — 30 — —— 10 — 320 60 — 30 1— — — — — 10 200 — 1 Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob — — 1.5 — — 1.5 — 140 — — 140 — — 14 — — 14 — Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows. 2. Pulse test. Unit Test conditions V IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 µA V V MHz pF VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC =...