ME4856

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME4856 FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Pulse Source-Drain Diode Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* thermal Resistance-Junction to Case * The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDSS VGSS ID IDM IS ISM PD TJ RθJA RθJC Limit 30 ±20 17 14 50 2.7 50 3.0 2.0 -55 to 150 T≦10 sec 30 Steady State 34 60 July, 2008-Ver4.0 ...