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2SC4123. C4123 Datasheet

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2SC4123. C4123 Datasheet






C4123 2SC4123. Datasheet pdf. Equivalent




C4123 2SC4123. Datasheet pdf. Equivalent





Part

C4123

Description

2SC4123



Feature


Ordering number:EN2956 NPN Triple Diffu sed Planar Silicon Transistor 2SC4123 U ltrahigh-Definition CRT Display Horizon tal Deflection Output Applications Fea tures · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP proc ess). · Adoption of MBIT process. · O n-chip damper diode. Package Dimension s unit:mm 2039D [2SC412.
Manufacture

Sanyo Semicon Device

Datasheet
Download C4123 Datasheet


Sanyo Semicon Device C4123

C4123; 3] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Max imum Ratings at Ta = 25˚C Parameter C ollector-to-Base Voltage Collector-to-E mitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pu lse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperat ure Storage Temperature Tj Tstg Tc=25 ˚C Conditions Ele.


Sanyo Semicon Device C4123

ctrical Characteristics at Ta = 25˚C P arameter Collector Cutoff Current Colle ctor-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Sa turation Voltage Base-to-Emitter Satura tion Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100m A, IB=0 VEB=4V, IC=0 IC=5A, IB=1.2A IC= 5A, IB=1.2A 2.8 2..


Sanyo Semicon Device C4123

0 1.0 123 5.45 5.45 3.5 20.4 2.0 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Ratings 1500 800 6 7 16 3 6 0 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 800 40 max 1 0 1.0 130 5 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifica tions that can handle applications that require extremely high.

Part

C4123

Description

2SC4123



Feature


Ordering number:EN2956 NPN Triple Diffu sed Planar Silicon Transistor 2SC4123 U ltrahigh-Definition CRT Display Horizon tal Deflection Output Applications Fea tures · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP proc ess). · Adoption of MBIT process. · O n-chip damper diode. Package Dimension s unit:mm 2039D [2SC412.
Manufacture

Sanyo Semicon Device

Datasheet
Download C4123 Datasheet




 C4123
Ordering number:EN2956
NPN Triple Diffused Planar Silicon Transistor
2SC4123
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm
2039D
[2SC4123]
16.0
3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=5A, IB=1.2A
IC=5A, IB=1.2A
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Ratings
1500
800
6
7
16
3
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
800
40
max
10
1.0
130
5
1.5
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/9149MO, TS No.2956–1/4




 C4123
Parameter
DC Current Gain
Diode Forward Voltage
Storage Time
Fall Time
Switching Time Test Circuit
2SC4123
Symbol
hFE1
hFE2
VF
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=5A
IEC=7A
IC=5A, IB1=1A, IB2=–2A
IC=5A, IB1=1A, IB2=–2A
Ratings
min typ
8
4.0
0.1
max
6.0
2.0
3.0
0.2
Unit
V
µs
µs
No.2956–2/4




 C4123
2SC4123
No.2956–3/4



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