2N2222

2N2222 Low Power Bipolar Transistors Features: NPN Silicon Planar Switching Transistors. Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 06/04/06 V1.0 2N2222 Low Power Bipolar Transistors Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Description Symbol 2N2222 Collector Emitter Voltage VCEO 30 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5 Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C IC 800 500 PD 2.28 1.2 6.85 Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 Unit V mA mW mW/°C W mW/°C °C Electrical Characteristics (Ta = 25°C unless specified otherwise) Description Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Symbol BVCEO BVCBO VEBOf Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 Value Minimum Maximum 30 - 60 - 5- Collector Leakage Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage ICBO VCB = 50V, IE = 0 VCB = 50V, IE = 0 Ta = 150°C *VCE (Sat) *VBE (Sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC...