2SK1895
Ordering number:EN4207
N-Channel Silicon MOSFET
2SK1895
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN4207
N-Channel Silicon MOSFET
2SK1895
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm
2063A
[2SK1895]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Conditions PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD Tc=25°C Tch Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V ID=8A, VGS=4V
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings 60
±15 12 48 2.0 25
150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
±15 V
100 µA
±10 µA
1.0 2.0 V
6.5 10.5
S
60 80 mΩ
80 110 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that...
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