K1803

Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 900 ±30 ±8 ±16 60 Allowable power dissipation TC = 25°C Ta = 25°C PD 100 3 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 1.9mH, IL = 8A, VDD = 50V, 1 pulse Unit V V A A mJ W °C °C s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage VDSS Gate threshold voltage Vth Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Diode forward voltage VDSF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz V...