Transistors
Power transistor (90±10V, 3A)
2SC5060
2SC5060
zFeatures 1) Built-in zener diode between collector and base...
Transistors
Power
transistor (90±10V, 3A)
2SC5060
2SC5060
zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”
loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode.
zEquivalent circuit
C
B
R1 R2
B : Base C : Collector E : Emitter
R1 3kΩ R2 1kΩ
E
zExternal dimensions (Unit : mm)
6.8 2.5
1.0 0.9 14.5 4.4
0.65Max.
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
∗1 Single pulse Pw=10ms ∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
Limits 90±10 90±10
6 1 2 1 150 −55 to +150
zPackaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SC5060 ATV M TV2 2500
Unit V V V
A(DC) A(Pulse)
W °C °C
∗1 ∗2
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Ou...
