AF9928N

N-Channel Enhancement Mode Power MOSFET AF9928N „ Features - Low On-resistance - Capable of 2.5V Gate Drive - Optimal DC/DC battery application „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. „ Product Summary BVDSS (V) 20 rDS(on) (mΩ) 23 ID (A) 5 „ Pin Assignments „ Pin Descriptions D1 1 S1 2 S1 3 G1 4 TSSOP-8 8 D2 7 S2 6 S2 5 G2 Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain „ Ordering information A X 9928N X X X Feature F :MOSFET PN Package Lead Free Packing TS: TSSOP-8 Blank : Normal Blank : Tube or Bulk L : Lead Free Package A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 11, 2005 1/5 N-Channel Enhancement Mode Power MOSFET AF9928N „ Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Drain Current (Note 1), at VGS=4.5V IDM PD TSTG TJ Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range at TA=25ºC at TA=70ºC at TA=25ºC Rating 20 ±12 5 3.5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC „ Thermal Data Symbol Para...