2N and 2P-Channel Enhancement Mode Power MOSFET
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Features
- Simple Drive Requirement - Low On-Resistance - Ful...
Description
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Features
- Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product
Product Summary
CH BVDSS (V) RDS(ON) (mΩ)
N 35
48
P -35
72
ID (A) 4.3 -3.6
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Pin Assignments
Pin Descriptions
N1G 1 N1D/P1D 2 N1S/N2S 3
N2G 4
SO-8
8 P1G 7 P1S/P2S 6 N2D/P2D 5 P2G
Ordering information
Pin Name
N1G N1D/P1D N1S/N2S
N2G P2G N2D/P2D P1S/P2S P1G
Description
Gate (NMOS1) Drain(NMOS1) / Drain(PMOS1) Source(NMOS1) / Source(NMOS2)
Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) / Drain(PMOS2) Source(PMOS1) / Source(PMOS2) Gate (PMOS1)
A X 9903M X X
Feature F :MOSFET
PN
Block Diagram
Package S: SO-8
Packing
Blank : Tube or Bulk A : Tape & Reel
P1S P1G
P1N1D N1G
N1S
P2S P2G
P2N2D N2G
N2S
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005 1/8
AF9903M
2N and 2P-Channel Enhancement Mode Power ...
Similar Datasheet