N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
AF9945N
Features
- Low On-resistance - Single Drive Requirement - Surface Mo...
Description
N-Channel Enhancement Mode Power MOSFET
AF9945N
Features
- Low On-resistance - Single Drive Requirement - Surface Mount Package
General Description
The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Product Summary
BVDSS (V) 60
rDS(on) (mΩ) 90
ID (A) 3.5
Pin Assignments
S1 1 G1 2 S2 3 G2 4
SOP-8
8 D1 7 D1 6 D2 5 D2
Pin Descriptions
Pin Name
S1/2 G1/2 D1/2
Description
Source Gate Drain
Ordering information
A X 9945N X X X
Feature F :MOSFET
PN
Package S: SOP-8
Lead Free
Blank : Normal L : Lead Free Package
Packing
Blank : Tube or Bulk A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 12, 2004 1/5
N-Channel Enhancement Mode Power MOSFET
AF9945N
Absolute Maximum Ratings
Symbol
VDS VGS
Drain-Source Voltage Gate-Source Voltage
Parameter
ID Continuous Drain Current (Note 1)
IDM
PD
TSTG TJ
Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
TA=25ºC TA=70ºC
TA=25ºC
Rating
60 ±25 3.5 2.8 20
2 0.016 -55 to 150 -55 to 150
Units V V
A
A W W/ºC ºC ºC
Thermal Resistance Ratings
Symbol
Parameter
Value
...
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