K1590

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. FEATURES Directly driven by ICs having a 5 V power source. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION PART NUMBER 2SK1590 Marking: G16 PACKAGE SC-59 (Mini Mold) 1.1 to 1.4 0.3 2.9 ±0.2 0.95 0.95 PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 2 3 +0.1 –0.05 0.4 1 Marking +0.1 –0.06 0.16 0 to 0.1 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) Drain Current (pulse) Note ID(DC) ID(pulse) Total Power Dissipation PT Channel Temperature Tch Storage Temperature Tstg 60 ±20 ±200 ±400 200 150 −55 to +150 V V mA mA mW °C °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required ...