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SSS4N60AS

Fairchild Semiconductor
Part Number SSS4N60AS
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Feb 3, 2015
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SSS4N60AS PDF File

SSS4N60AS
SSS4N60AS

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 2.
037 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC) Linear Derating Factor O1 O1 O3 Operating Junction and Storage...


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