Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SA1943 TRANSISTOR (PNP)
FEATURES z High Collector Current Capability z High Power Dissipation z High Frequency z High Voltage z Complement to 2SA5200
TO – 3P
1. BASE 2. COLLECTOR 3. EMITTER
APPLICATIONS z High-Fidelity Audio Output Amplifier z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC PCM RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Collector Power Dissipation (TC=25℃) Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -230 -230
-5 -15 3.5 150 36 150 -55~+150
Unit V V V A W W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage Collector-emitter breakdown voltage
V(BR)CBO V(BR)CEO*
IC=-0.1mA,IE=0 IC=-50mA,IB=0
-230 -230
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
Collector cut-off current
ICBO VCB=-230V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE(1) hFE(2)*
VCE=-5V, IC=-1A VCE=-5V, IC=-7A
55 35
Collector-emitter saturation voltage
VCE(sat)
IC=-8A,IB=-0.8A
Base-emitter voltage
VBE VCE=-5V, IC=-7A
Collector output capacitance
Cob VCB=-10V,IE=0, f=1MHz
Transition frequency
fT VCE=-5V,IC=-1A
*Pulse test
CLASSIFICATION OF hFE (1)
RANK RANGE
R 55-110
Typ
360 30 O 80-160
Max
-5 -5 160 -3 -1.5
Unit V V V μA μA
V V pF MHz
A,Jul,2012
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