NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product ...
NPN EPITAXIAL SILICON
TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=1100MHz
2SC1812
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector Dissipation Ta=25 oC* Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
30 15 5 50 225 150 -55~150
(Ta=25 oC)
Unit
V V V mA mW
OC OC
Electrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance Collector-Gain-Bandwidth Product
BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) Cob fT
30 15 5
28 100
1.3 700 1100
50 50 300 0.5 1.7
V V V nA nA
V PF MHz
IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SC1812=J8
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