AD100-8

AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diameter active area low capacitance Parameters: (at 20 ±2°C) Active Area Dark Current 1) (M=100) Total Capacitance 1) (M=100) Breakdown Voltage UBR (at ID=2µA) Temperature Coefficient of UBR Spectral Responsivity (at 800 nm, at M=100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain "Exess Noise" factor (M=100) "Exess Noise" index (M=100) Noise Current (M=100) N.E.P. (M=100, 800 nm) Operating Temperature Storage Temperature 0.00785 mm2 ∅ 100 µm max. 0.1 nA typ. 50 pA typ. 0.8 pF 120 - 190 V 0.35 … 0.55 V/K typ. 0.45 V/K min. 45 A/W typ. 50 A/W > 2 GHz < 180 ps 50 - 60 > 200 typ. 2.2 typ. 0.2 typ. 0.15 pA/Hz½ typ. 3 * 10-15 W/Hz½ -20 ... +70 °C -60 ... +100 °C 1) measurement conditions: Setup of photo current 50 pA at M = 1 and irradiation by a LED (680 nm, 60 nm bandwith). Increase the photo current up to 5.0 nA, (M = 100) by internal multiplication due to an increasing bias voltage. Package (TO52S1): CASE ANODE 4 31 45° ∅ 2.54 ∅ 5.4 ± 0.2 ∅ 4.7 ± 0.1 ∅ 2.5 ± 0.1 ∅ 2.0 min. CATHODE 0.9 ± 0.3 0.5 max. 3.6 ± 0.2 2.7 ± 0.2 sensitive surface 13 ± 1.0 0.4 max. ∅ 0.45 Chip: AD100-8 diam. active area: 100 µm 1 3 4 view without window cap www.silicon-sensor.com Version: 04-10-26 Specification before: SSO-AD-100-8-TO52-S1 www.pacific-sensor.com Sabs (A/W) 0 ,6 0 0 0 ,5 0 0 0 ,4 0 0 0 ,3 0 0 0 ,2 0 0 0 ,1 0 0 0 ,0 0 0 400 Spectral Responsivit...