Si9942DY

Si9942DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) rDS(on) (W) N-Channel 20 0.125 @ VGS = 10 V 0.250 @ VGS = 4.5 V P-Channel –20 0.200 @ VGS = –10 V 0.350 @ VGS = –4.5 V Recommended upgrade: Si4532DY or Si4539DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6452DQ ID (A) "3.0 "2.0 "2.5 "2.0 D1 D1 S2 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View G2 G1 S1 N-Channel MOSFET D2 D2 P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel P-Channel 20 "20 –20 "20 "3.0 "2.5 "2.5 "2.0 "10 "10 1.6 –1.6 2.0 1.3 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Symbol N- or P-Channel Unit Maximum Junction-to-Ambienta RthJA 62.5 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1212. A SPICE Model data sheet is available for this product (FaxBack document #5107). Siliconix S-47958—Rev. J, 15-Apr-96 1 Si9942DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition ...