Document
MBRAF2H100T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • 150°C Operating Junction Temperature • Guard−Ring for Stress Protection • These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band • Device Meets MSL 1 Requirements • ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
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SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 100 VOLTS
SMA−FL CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW RAAG
G
RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF2H100G SMA−FL 5000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
Publication Order Number: MBRAF2H100/D
MBRAF2H100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current
(TL = 140°C) Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 145°C Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM VRWM
VR IO
IFRM
IFSM
100
2.0 4.0 130
V
A A A
Storage Temperature Range
Tstg −65 to +175
°C
Operating Junction Temperature (Note 1)
TJ −65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
YJCL RqJA
Value TBD TBD
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 3)
(iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3)
(VR = 100 V) 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
Symbol vF
IR
Value
TJ = 25°C
TJ = 125°C
0.79 0.65
0.050
9.0
Unit V
mA
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IF, FORWARD CURRENT (A)
IR, REVERSE CURRENT (mA)
MBRAF2H100T3G
TYPICAL CHARACTERISTICS
100 100
150°C 125°C
25°C
10 10
125°C
150°C
25°C
11
IF, FORWARD CURRENT (A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage
1.2
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage
IR, REVERSE CURRENT (mA)
10 150°C
1
0.1 125°C
10 150°C
1 125°C
0.01 0.1
0.001 0.0001 0.00001
0
25°C
10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
0.01
0.001
90 100
0
25°C
10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
C, CAPACITANCE (pF)
450
400
350
TJ = 25°C f = 1 MHz
300
250
200
150
100
50 0 0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance
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R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
100 50% Duty Cycle 20%
10 10% 5%
2% 1
1%
0.1
MBRAF2H100T3G
0.01 Single Pulse
0.001 0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1 10
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, Junction−to−Ambient
100 1000
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MBRAF2H100T3G
PACKAGE DIMENSIONS
E E1
TOP VIEW
D A
SMA−FL CASE 403AA
ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS DIM MIN MAX
A 0.90 1.10 b 1.25 1.65 c 0.15 0.30 D 2.40 2.80 E 4.80 5.40 E1 4.00 4.60 L 0.70 1.10
c SIDE VIEW
C
SEATING PLANE
RECOMMENDED SOLDER FOOTPRINT*
5.56 1.76
2X b BOTTOM VIEW
2X L
1.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, plea.