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MBRAF2H100T3G Dataheets PDF



Part Number MBRAF2H100T3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet MBRAF2H100T3G DatasheetMBRAF2H100T3G Datasheet (PDF)

MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Low Profile Package for Space .

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MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Low Profile Package for Space Constrained Applications • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • 150°C Operating Junction Temperature • Guard−Ring for Stress Protection • These are Pb−Free and Halide−Free Devices Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Cathode Polarity Band • Device Meets MSL 1 Requirements • ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 100 VOLTS SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM AYWW RAAG G RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF2H100G SMA−FL 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 Publication Order Number: MBRAF2H100/D MBRAF2H100T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 140°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 145°C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IO IFRM IFSM 100 2.0 4.0 130 V A A A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. Symbol YJCL RqJA Value TBD TBD Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3) (VR = 100 V) 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. Symbol vF IR Value TJ = 25°C TJ = 125°C 0.79 0.65 0.050 9.0 Unit V mA http://onsemi.com 2 IF, FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) MBRAF2H100T3G TYPICAL CHARACTERISTICS 100 100 150°C 125°C 25°C 10 10 125°C 150°C 25°C 11 IF, FORWARD CURRENT (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.2 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage IR, REVERSE CURRENT (mA) 10 150°C 1 0.1 125°C 10 150°C 1 125°C 0.01 0.1 0.001 0.0001 0.00001 0 25°C 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 0.01 0.001 90 100 0 25°C 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current C, CAPACITANCE (pF) 450 400 350 TJ = 25°C f = 1 MHz 300 250 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance http://onsemi.com 3 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 MBRAF2H100T3G 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient 100 1000 http://onsemi.com 4 MBRAF2H100T3G PACKAGE DIMENSIONS E E1 TOP VIEW D A SMA−FL CASE 403AA ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. MILLIMETERS DIM MIN MAX A 0.90 1.10 b 1.25 1.65 c 0.15 0.30 D 2.40 2.80 E 4.80 5.40 E1 4.00 4.60 L 0.70 1.10 c SIDE VIEW C SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 2X b BOTTOM VIEW 2X L 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, plea.


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