MBRAF260T3G, NRVBAF260T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol...
