Ordering number:EN1614C
NPN Triple Diffused Planar Silicon Transistor
2SC3636
Ultrahigh-Definition CRT Display Horizont...
Ordering number:EN1614C
NPN Triple Diffused Planar Silicon
Transistor
2SC3636
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3636]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg
tf
VCB=500V, IE=0 VCE=900V, RBE=0 IC=100mA, IB=0 VEB=5V, IC=0 IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=5V, IC=0.8A IC=4A, IB1=0.8A, IB2=–1.6A IC=4A, IB1=0.8A, IB2=–1.6A
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Ratings 900 500 7 7 14 80 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
500
8 0.1
max 10 0.5
1 2 1.5
3.0 0.2
Unit
µA mA V mA V V
µs µs
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life...