ST25N10

ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE 100V/12.0A, RDS(ON) = 40mΩ @VGS = 10V 100V/10.0A, RDS(ON) = 45mΩ @VGS =4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PART MARKING Y: Year Code A: Week Code P: Process Code X: Produces Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST25N10 2013. V1 ST25N10 N Channel Enhancement Mode MOSFET 25.0A SOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 100 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM ±20 25.0 16.0 75 Continuous Source Current (Diode Conduction) IS 25 Power Dissipation TA=25℃ PD 79 Operation Junction Temperature TJ 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 110 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mou...