1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF040B/040BA SST26WF080B/080BA
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltag...
Description
SST26WF040B/040BA SST26WF080B/080BA
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
Features
Single Voltage Read and Write Operations
- 1.65-1.95V
Serial Interface Architecture
- Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial
command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency
- 104 MHz max
Burst Modes
- Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around
Superior Reliability
- Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention
Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 1.8 μA (typical)
Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max)
Page-Program
- 256 Bytes per page in x1 or x4 mode
End-of-Write Detection
- Software polling the BUSY bit in status register
Flexible Erase Capability
- Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay
blocks - One 32 KByte top and bottom overlay block - Uniform 64 KByte overlay blocks
Write-Suspend
- Suspend Program or Erase operation to access another block/sector
Software Reset (RST) mode
Software Write Protection
- Individual-Block Write Protection with permanent lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte parameter blocks
Security I...
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