E Series Power MOSFET
www.vishay.com
SiHB20N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at ...
Description
www.vishay.com
SiHB20N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
92 10 19 Single
0.184
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Computing
- PC silver box / ATX power supplies Lighting
- Two stage LED lighting Consumer electronics Applications using hard switched topologies
- Power factor correction (PFC) - Two switch forward converter - Flyback converter Switch mode power supplies (SMPS)
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
D2PAK (TO-263) SiHB20N50E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz)
VDS VGS
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope Reverse Diode dV/dt d
VDS = 0 V to 80 % VDS
Soldering Recommendations (Peak Temperature) c
for 10 s
ID IDM
EAS PD TJ, Tstg dV/dt
Notes
a. Repetitive rating; pu...
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