SiHB24N65E

www.vishay.com SiHB24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 21 37 Single 0.145 D D2PAK (TO-263) G GD S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Compliant to RoHS Directive 2002/95/EC APPLICATIONS Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) D2PAK (TO-263) SiHB24N65E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dtd TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering Recommendations (Peak Temperature) for 10 ...