Transistors
2SC1980
Silicon NPN epitaxial planar type
For high breakdown voltage low-noise amplification Complementary ...
Transistors
2SC1980
Silicon
NPN epitaxial planar type
For high breakdown voltage low-noise amplification Complementary to 2SA0921
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
■ Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
120
V
c type Collector-emitter voltage (Base open) VCEO
120
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
2.3±0.2
V
le sta ntinu Collector current
IC
20
mA
a e cyc isco Peak collector current
ICP
50
mA
life d, d Collector power dissipation
PC
250
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter 2: Collector 3: Base TO-92-B1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
120
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
120
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
1
µA
inten ance Forward current t...
