Document
l !UNITED TECHNOLOGIES MOSTEK
MEMORY COMPONENTS
65,536 x 1-BIT DYNAMIC RAM
MK4564(P/N/J/E)-15/20
FEATURES
o Recognized industry standard 16-pin configuration from
Mostek
o Single +5V (± 10%) supply operation
o On chip substrate bias generator for optimum
performance
o Low power: 300 mW active, max
22 mW standby, max
o 150 ns access time, 260 ns cycle time (MK4564-15)
200 ns access time, 330 ns cycle time (MK4564-20)
o Extended DOUT hold using CAS control (Hidden Refresh)
o Common I/O capability using "early write"
o Read, Write, Read-Write, Read-Modify-Write and Page-
Mode capability
•
o All inputs TTL compatible, low capacitance, and
protected against static charge
o Scaled POLY 5™ technology
o 128 refresh cycles (2 msec)
Pin 9 is not needed for refresh
DESCRIPTION
The MK4564 is the new generation dynamic RAM. Organized 65,536 words by 1 bit, it is the successor to the industry standard MK4116. The MK4564 utilizes Mostek's Scaled POLY 5 process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. The use of dynamic circuitry throughout, including the 512 sense amplifiers, assures that power dissipation is minimized without any sacrifice in speed or internal and external operating margins. Refresh characteristics have been chosen to maximize yield (low cost to user) while maintaining compatibility between dynamic RAM generations.
PIN FUNCTIONS
Multiplexed address inputs (a feature dating back to the industry standard MK4096, 1973) permit the MK4564 to be packaged in a standard 16-pin DIP with only 15 pins required for basic functionality. The MK4564 is designed to be compatible with the JEDEC standards for the 64K x 1 dynamic RAM.
The output ofthe MK4564 can be held valid up to 10 ~sec by
holding CAS active low. This is quite useful since refresh
cycles can be performed while holding data valid from a previous cycle. This feature is referred to as Hidden Refresh.
The 64K RAM from Mostek is the culmination of several years of circuit and process development, proven in predecessor products.
PIN OUT
Ao-A 7
CAS(~)
DIN (D) DouT(Q)
Address Inputs
Column Address Strobe Data In Data Out
RAS (RE) WRITE (W)
Vee Vss N/C
Row Address Strobe Read/ Write Input Power (5V) GND Not Connected
DUAL·IN·LlNE PACKAGE
16 v••
16 mice)
14 DourlQ) 13 As 12 A. 11 A. 10 A.
9 A7
LEAD LESS CHIP CARRIER
en0IN1D) N C \Iss
retl
1\2.._\
\1\ \181
I I L_.1
:1~ 1,,-"
WRITelWI .!.J
l_J
L!..ts Dou~Q)
L~ AS
AO ~J
[~ A3
[I:2 A4
r;1 r~l r,~i r,~i
A1 'Icc A7 AI5
Available soon in MIL-STD-883 Class B (MKB).
IV·71
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vee supply relative to V55 .....•......................•................•....•.•..... -1.0 V to +7.0 V Operating Temperature, TA (Ambient) ..........................•.•................................ O°C to +70C Storage Temperature (Ceramic) .....•................................•....................... -65°C to +150°C Storage Temperature (Plastic) ................•..................................•....•.•.... -55°C to +125°C Power Dissipation .•..•.......................................•.....................•............... 1 Watt Short Circuit Output Current .......•.................•...............................................50 mA
'Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (O°C :$ TA :$ 70°C)
SYM Vee V1H
V1L
PARAMETER
Supply Voltage
Input High (Logic 1) Voltage, All Inputs
Input Low (Logie 0) Voltage, All Inputs
MIN 4.5 2.4
-2.0
TYP 5.0 -
-
MAX 5.5 V ee +1
.8
UNITS V V
V
NOTES 1 1
1,18
DC ELECTRICAL CHARACTERISTICS
=(O°C:$ TA :$ 70°C) (Vee 5.0 V ± 10%)
SYM
PARAMETER
lec1 OPERATING CURRENT Average power supply operating current
=(RAS, CAS cycling; tRe 330 ns)
ICC2 STANDBY CURRENT
=Power supply standby current (RAS V1H, =DOUT High Impedance)
ICC3 RAS ONLY REFRESH CURRENT Average power supply current, refresh mode
= =(RAS cycling, CAS V1H; tRC tRC min.)
ICC4 PAGE MODE CURRENT
Average power supply current, page mode
= =operation' (RA'S V1L, tRA5 tRA5 max., CAS =cycling; tpc tpc min.)
II(L) INPUT LEAKAGE Input leakage current, any input
(0 V :$ V1N :$ Vcd, all other pins not under
test =0 V
IO(L) OUTPUT LEAKAGE Output leakage current (DOUT is disabled, OV:$ VOUT :$ Vcd
OUTPUT LEVELS
=VOH Output High (Logic 1) voltage (lOUT -5 mAl =VOL Output Low (Logic 0) voltage (lOUT 4.2 mAl
MIN
MAX 54.0
UNITS mA
NOTES 2
4 mA
45 mA
2
40 mA
2
-10 10 iJ-A
-10 10 iJ-A
2.4 0.4
V V
IV-72
NOTES:
1. All voltages referenced to VSS. 2. ICC is dependent on output loading and cycle rates. Specified values are
obtained w.