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GP201MHS18

Part Number	GP201MHS18
Manufacturer	Dynex Semiconductor
Description	Low VCE(SAT) Half Bridge IGBT Module
Features	s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Pe...
Published	Mar 23, 2005
Datasheet	GP201MHS18 PDF File

Features

s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) ...

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GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module - Dynex Semiconductor

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