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GP200MHS12

Part Number	GP200MHS12
Manufacturer	Dynex Semiconductor
Description	Half Bridge IGBT Module
Features	s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (ty...
Published	Mar 23, 2005
Datasheet	GP200MHS12 PDF File

Features

s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction He...

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