BC177B

BC177/BC177B Series Low Power Bipolar Transistors Feature: PNP Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 21/04/06 V1.0 BC177/BC177B Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Rth (j-c) BC177 45 50 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 175 Unit V A W mW/°C °C °C/W Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Collector-Cut off Current Symbol ICES Test Condition VCE = 20V, IE = 0 Tamb = 125°C VCE = 20V, IE = 0 Minimum - Collector-Base Voltage VCBO IC = 10µA, IE = 0 50 Typical - Collector-Emitter Voltage VCEO IC = 2mA, IB = 0 45 - Emitter-Base Voltage VEBO IE = 10µA, IC = 0 5.0 - Maximum 100 4.0 - - Unit nA µA V V V DC Current IC = 2mA, VCE = 5V hFE BC177 120 B Group 180 Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VCE (Sat) VBE (Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA - ...