K4075

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn (Tin) 2SK4075-ZK-E2-AY PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low Ciss: Ciss = 2900 pF TYP. Logic level drive type ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±60 ±180 A A Total Power Dissipation (TC = 25°C) PT1 52 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS 28 A EAS 78 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.4 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W (TO-252) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Elect...