C5251

2SC5251 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 µsec (typ) Isolated package TO-3PFM (N) Outline TO-3PFM (N) 1 2 3 1. Base 2. Collector 3. Emitter Preliminary 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Ratings 1500 800 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 800 Emitter to base breakdown voltage V(BR)EBO 6 Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage ICES hFE1 hFE2 VCE(sat) — 8 5 — Base to emitter saturation voltage VBE(sat) — Fall time tf — Typ — — — — — — — 0.2 Max — Unit V Test conditions IC = 10 mA, RBE = ∞ —V IE = 10 mA, IC = 0 500 µA 35 9 5V VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 7 A, IB = 1.8 A 1.5 V IC = 7 A, IB = 1.8 A 0.4 µsec ICP = 6 A, IB1 = 1.5 A, fH = 31.5 kHz 2 Collector Power Dissipation Pc (W) Collector Current I C (A) Maximum Collector Power Dissipation Curve 80 60 40 20 0 50 100 150 200 Case Temperature Tc (...