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SGA6286Z Dataheets PDF



Part Number SGA6286Z
Manufacturers RFMD
Logo RFMD
Description CASCADABLE SiGe HBT MMIC AMPLIFIER
Datasheet SGA6286Z DatasheetSGA6286Z Datasheet (PDF)

SGA6286ZDC to 5500MHz, Cascadable SiGe HBT MMIC Amplifier SGA6286Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression.

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SGA6286ZDC to 5500MHz, Cascadable SiGe HBT MMIC Amplifier SGA6286Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain (dB) Return Loss (dB) Gain & Return Loss vs. Frequency VD= 4.0 V, ID= 75 mA (Typ.) 20 0 15 GAIN -10 10 IRL ORL 5 -20 TL=+25ºC -30 0 -40 0123456 Frequency (GHz) Features  Broadband Operation: DC to 5500 MHz  Cascadable 50Ω  Operates from Single Supply  Low Thermal Resistance Package Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 12.5 13.6 15.2 dB 850MHz 12.4 dB 1950MHz 11.2 dB 2400MHz Output Power at 1dB Compression 18.7 dBm 850 MHz 17.8 dBm 1950 MHz Output Third Intercept Point 35.0 dBm 850 MHz 33.0 dBm 1950 MHz Bandwidth Determined by Return Loss 5500 MHz >10dB Input Return Loss 14.6 dB 1950MHz Output Return Loss 13.9 dB 1950MHz Noise Figure 4.2 dB 1950MHz Device Operating Voltage 3.6 4.0 4.4 V Device Operating Current 67 75 83 mA Thermal Resistance (Junction - Lead) 97 °C/W Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51Ω, TL=25°C, ZS=ZL=50Ω DS100915 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 7 SGA6286Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power 150 mA 6V +18 dBm Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp +150 -40 to +85 +150 °C °C °C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Typical Performance at Key Operating Frequencies Parameter Unit 100 500 850 1950 MHz MHz MHz MHz Small Signal Gain dB 14.0 13.9 13.6 12.4 Output Third Order Intercept Point dBm 37.0 36.0 35.0 33.0 Output Power at 1dB Compression dBm 18.7 19.0 18.7 17.8 Input Return Loss dB 18.8 17.4 15.8 14.6 Output Return Loss dB 35.7 36.3 23.8 13.9 Reverse Isolation dB 18.4 18.6 18.8 18.8 Noise Figure dB 4.0 3.9 3.9 4.2 Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51Ω, TL=25°C, ZS=ZL=50Ω 2400 MHz 11.2 31.4 16.8 15.5 13.4 18.5 4.4 3500 MHz 9.6 28.1 15.2 20.6 16.4 17.0 4.8 2 of 7 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS100915 OIP3(dBm) P1dB(dBm) SGA6286Z OIP3 vs. Frequency VD= 4.0 V, ID= 75 mA 40 +25°C 36 TL -40°C +85°C 32 28 24 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) P1dB vs. Frequency VD= 4.0 V, ID= 75 mA 20 18 16 14 +25°C 12 TL -40°C +85°C 10 0.0 0.5 1.0 1.5 2.0 .


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