Document
Ordering number : ENN7537
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
2SJ654
P-Channl Silicon MOSFET
2SJ654
DC / DC Converter Applications
Package Dimensions
unit : mm 2063A
10.0 3.2
[2SJ654] 4.5
2.8
3.5 7.2 16.0
18.1 5.6
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6 1.2
0.75 123 2.55 2.55
2.55 2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings --100 ±20 --8 --32 2.0 20 150
--55 to +150
Unit V V A A W W °C °C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J654
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
ID=--1mA, VGS=0 VDS=--100V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--4A
min --100
--1.2 4
Ratings typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
6S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100526 No.7537-1/4
2SJ654
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage
Symbol
RDS(on)1 RDS(on)2
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd VSD
Conditions
ID=--4A, VGS=--10V ID=--4A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=--10V, ID=--8A VDS=--50V, VGS=--10V, ID=--8A VDS=--50V, VGS=--10V, ID=--8A IS=--8A, VGS=0
Switching Time Test Circuit
VIN 0V
--10V
VIN
PW=10µs D.C.≤1%
G
VDD= --50V
ID= --4A RL=12.5Ω D VOUT
2SJ654 P.G 50Ω S
Ratings min typ max
Unit
240 315 mΩ
320 450 mΩ
945 pF
72 pF
60 pF
12 ns
65 ns
80 ns
38 ns
20 nC
3.8 nC
4.5 nC
--0.92
--1.2 V
Drain Current, ID -- A
ID -- VDS
--20
Tc=25°C
--18 --16
--8V
--10V --6V
--14
--12
--4V
--10
--8
--6
--4
VGS= --3V
--2
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Drain-to-Source Voltage, VDS -- V IT06183
Drain Current, ID -- A
--18
VDS= --10V
--16
ID -- VGS
25°C Tc= --25°C 75°C
--14
--12
--10
--8
--6
--T2c5=°75C°C 25°C
--4
--2
0 0 --1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS -- V IT06184
No.7537-2/4
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Ciss, Coss, Crss -- pF
Forward Current, IF -- A
Cutoff Voltage, VGS(off) -- V
2SJ654
RDS(on) -- VGS
600
ID= --4A
500
400
Tc= 75°C
300
25°C
200 --25°C
100
0 --2
--2.5
--2.0
--3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
VGS(off) -- Tc
IT06185
VDS= --10V ID= --1mA
--1.5
--1.0
--0.5
0 --50
--100 7 5 3 2
--10 7 5 3 2
--1.0 7 5 3 2
--0.1 7 5 3 2
--0.01 0
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT06187
VGS=0
Tc=75°C 25°C
--25°C
--0.3
--0.6
--0.9
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
--1.2 IT06189
f=1MHz
1000 7 5
3 2
Ciss
100 7 5
3 0
Coss Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06191
Gate-to-Source Voltage, VGS -- V
Switching Time, SW Time -- ns
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Tc
700
600
500 400 300
I DI D==---4-A4A, V, VGGS=S=--4--V10V
200
100
0 --50 --25
3 2
0 25 50 75 100
Case Temperature, Tc -- °C
yfs -- ID
125 150 IT06186
VDS= --10V
10 25°C
7 5
Tc= --25°C
3 75°C
2
1.0 7 5
3
--0.1
2 3 5 7 --1.0
2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
7
5 VDD= --50V VGS= --10V
3
2
23 IT06188
100 td(off)
7
5 tf
3 tr
2
td(on)
10
7 --0.1
23
--10
VDS= --50V --9 ID= --8A
5 7 --1.0 2 3 5
Drain Current, ID -- A
VGS -- Qg
7 --10
--8
23 IT06190
--7
--6
-.