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J654 Dataheets PDF



Part Number J654
Manufacturers Sanyo
Logo Sanyo
Description P-Channl Silicon MOSFET
Datasheet J654 DatasheetJ654 Datasheet (PDF)

Ordering number : ENN7537 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ654] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr.

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Ordering number : ENN7537 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ654] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --8 --32 2.0 20 150 --55 to +150 Unit V V A A W W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J654 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=--1mA, VGS=0 VDS=--100V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--4A min --100 --1.2 4 Ratings typ max Unit V --1 µA ±10 µA --2.6 V 6S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100526 No.7537-1/4 2SJ654 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain“Miller”Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--4A, VGS=--10V ID=--4A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=--10V, ID=--8A VDS=--50V, VGS=--10V, ID=--8A VDS=--50V, VGS=--10V, ID=--8A IS=--8A, VGS=0 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% G VDD= --50V ID= --4A RL=12.5Ω D VOUT 2SJ654 P.G 50Ω S Ratings min typ max Unit 240 315 mΩ 320 450 mΩ 945 pF 72 pF 60 pF 12 ns 65 ns 80 ns 38 ns 20 nC 3.8 nC 4.5 nC --0.92 --1.2 V Drain Current, ID -- A ID -- VDS --20 Tc=25°C --18 --16 --8V --10V --6V --14 --12 --4V --10 --8 --6 --4 VGS= --3V --2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Drain-to-Source Voltage, VDS -- V IT06183 Drain Current, ID -- A --18 VDS= --10V --16 ID -- VGS 25°C Tc= --25°C 75°C --14 --12 --10 --8 --6 --T2c5=°75C°C 25°C --4 --2 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V IT06184 No.7537-2/4 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ciss, Coss, Crss -- pF Forward Current, IF -- A Cutoff Voltage, VGS(off) -- V 2SJ654 RDS(on) -- VGS 600 ID= --4A 500 400 Tc= 75°C 300 25°C 200 --25°C 100 0 --2 --2.5 --2.0 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V VGS(off) -- Tc IT06185 VDS= --10V ID= --1mA --1.5 --1.0 --0.5 0 --50 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 3 2 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- °C IF -- VSD IT06187 VGS=0 Tc=75°C 25°C --25°C --0.3 --0.6 --0.9 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS --1.2 IT06189 f=1MHz 1000 7 5 3 2 Ciss 100 7 5 3 0 Coss Crss --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V IT06191 Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Tc 700 600 500 400 300 I DI D==---4-A4A, V, VGGS=S=--4--V10V 200 100 0 --50 --25 3 2 0 25 50 75 100 Case Temperature, Tc -- °C yfs -- ID 125 150 IT06186 VDS= --10V 10 25°C 7 5 Tc= --25°C 3 75°C 2 1.0 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A SW Time -- ID 7 5 VDD= --50V VGS= --10V 3 2 23 IT06188 100 td(off) 7 5 tf 3 tr 2 td(on) 10 7 --0.1 23 --10 VDS= --50V --9 ID= --8A 5 7 --1.0 2 3 5 Drain Current, ID -- A VGS -- Qg 7 --10 --8 23 IT06190 --7 --6 -.


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