DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENC...
DATA SHEET
DARLINGTON POWER
TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1843 is a Darlington connection
transistor with on-chip dumper diode in collector to emitter and zener diode in collector to base. This
transistor is ideal for use in acuator drives such as motors, relays, and solenoids.
FEATURES High DC current gain due to Darlington connection High surge resistance due to on-chip protection elements:
C to E: Dumper diode C to B: Zener diode Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)*
PT(Ta = 25°C) Tj Tstg
Ratings 60±10 60±10
7.0 ±1.0 ±2.0 1.0 150 −55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50%
Unit V V V A A W °C °C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current DC current gain DC current gain
ICBO IEBO hFE2** hFE2**
VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 0.2 A VCE = 2.0 V, IC = 0.5 A
Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time
VCE(sat)** VBE(sat)**
tON tstg tf
IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, RL = 100 Ω IB1 ...