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D1843

NEC

NPN Silicon Transistor

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENC...


NEC

D1843

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DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FEATURES High DC current gain due to Darlington connection High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT(Ta = 25°C) Tj Tstg Ratings 60±10 60±10 7.0 ±1.0 ±2.0 1.0 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50% Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain ICBO IEBO hFE2** hFE2** VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 0.2 A VCE = 2.0 V, IC = 0.5 A Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCE(sat)** VBE(sat)** tON tstg tf IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, RL = 100 Ω IB1 ...




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