Document
Ordering number:EN550F
NPN Epitaxial Planar Silicon Transistor
2SD879
1.5V, 3V Strobe Applications
Features
· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster than that of germanium transistors.
· Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted.
· Small package and large allowable collector dissipation (TO-92, PC=750mW).
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low current to high current.
Specifications
Package Dimensions
unit:mm 2003B
[2SD879]
5.0 4.0
4.0
0.6 2.0 14.0 5.0
0.45 0.5 0.45
123
1.3 1.3
0.44
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEX VCEO VEBO
IC ICP PC Tj
Tstg
100ms single pulse
Conditions
Ratings 30 20 10 6 3 5
750 150 –55 to +150
Unit V V V V A A
mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE
fT Cob VCE(sat)
VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=3A (pulse) VCE=10V, IC=50mA VCB=10V, f=1MHz IC=3A, IB=60mA (pulse)
Ratings min typ max
Unit
1.0 µA
1.0 µA
140 210
200 MHz
30 pF
0.3 0.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/N1596TS (KOTO) 8-3475/5137KI/3075KI/5244KI, TS No.550–1/4
Continued from preceding page. Parameter
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
2SD879
Symbol
Conditions
V(BR)CBO V(BR)CEX V(BR)CEO V(BR)EBO
IC=10µA, IE=0 IC=1mA, VBE=3V IC=1mA, RBE=∞ IE=10µA, IC=0
Ratings min typ
30 20 10
6
max
Unit
V V V V
No.550–2/4
2SD8.