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D879 Dataheets PDF



Part Number D879
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SD879
Datasheet D879 DatasheetD879 Datasheet (PDF)

Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted. · Small package and large allowable collector dissipation (TO-92, PC=750mW). · Large c.

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Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted. · Small package and large allowable collector dissipation (TO-92, PC=750mW). · Large current capacity and highly resistant to breakdown. · Excellent linearity of hFE in the region from low current to high current. Specifications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 1.3 1.3 0.44 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-92 EIAJ : SC-43 SANYO : NP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEX VCEO VEBO IC ICP PC Tj Tstg 100ms single pulse Conditions Ratings 30 20 10 6 3 5 750 150 –55 to +150 Unit V V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=3A (pulse) VCE=10V, IC=50mA VCB=10V, f=1MHz IC=3A, IB=60mA (pulse) Ratings min typ max Unit 1.0 µA 1.0 µA 140 210 200 MHz 30 pF 0.3 0.4 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21599TH (KT)/N1596TS (KOTO) 8-3475/5137KI/3075KI/5244KI, TS No.550–1/4 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 2SD879 Symbol Conditions V(BR)CBO V(BR)CEX V(BR)CEO V(BR)EBO IC=10µA, IE=0 IC=1mA, VBE=3V IC=1mA, RBE=∞ IE=10µA, IC=0 Ratings min typ 30 20 10 6 max Unit V V V V No.550–2/4 2SD8.


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