Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementa...
Transistor
2SA1123
Silicon
PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2631
s Features
q Satisfactory foward current transfer ratio hFE collector current IC characteristics.
q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –150 –150 –5 –100 –50 750 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage
ICBO VCEO VEBO hFE* VCE(sat)
VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA
–150 –5 130
–1 µA V V
450 –1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance Noise voltage
Cob NV
VCB = –10V...