Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD357
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527
APPLICATIONS ·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V 5V
IC Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
0.8 A
1 W
10
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD357
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 50mA; VCE= 4V
ICBO Collector Cutoff Current
VCB= 25V; IE= 0
ICEO Collector Cutoff Current
VCE= 100V; RBE= ∞
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 0.3A; VCE= 4V
MIN TYP. MAX UNIT 100 V 110 V
5V 1.0 V
0.7 V 10 μA 1 mA 10 μA
55 300
hFE Classifications CD
E
55-110 90-180 150-300
isc website:www.iscsemi.cn
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