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13007

Part Number	13007
Manufacturer	Elite
Description	NPN Epitaxial Silicon Transistor
Published	Jan 5, 2015
Detailed Description	13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Colle...
Datasheet	13007 PDF File

Overview

13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 700 400 9 8 80 150 -55~+150 V V V A W oC oC TO-220 1.
Base 2.
Collector 3.
Emitter Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Emitter Breakdown Voltage BVCEO Emitter Cut-off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Satu...

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