OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt...
OptiMOS® Power-
Transistor
Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P- TO262 -3-1
SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
Product Summary
VDS 40 V
RDS(on)
4 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type SPP80N04S2-H4
SPB80N04S2-H4 SPI80N04S2-H4
Package
Ordering Code
P- TO220 -3-1 Q67060-S6014
P- TO263 -3-2 Q67060-S6013
P- TO262 -3-1 Q67060-S6014
Marking 2N04H4 2N04H4 2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR dv/dt
VGS Ptot
Tj , Tstg
Value
80 80 320
660
25 6
±20 300
-55... +175 55/175/56
Unit A
mJ
kV/µs V W °C
Page 1
2003-05-08
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- 0.35 0.5 K/W - - 62
- - 62 - - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Ch...