ME2N7002E

N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION (SOT-23) Top View ME2N7002E FEATURES ● 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely low RDS (ON) ● Exceptional on-resistance and maximum DC current capability ● SOT-23 package design APPLICATIONS ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability. ● The soldering temperature and time shall not exceed 260℃ for more than 10 seconds. Maximum ratings and electrical characteristic Ratings at 25°C ambient temperature unless otherwise specified Symbol PARAMETER VDSS VGSS VGSS ID Drain-Source Voltage Gate-Source Voltage - Continuous Gate-Source Voltage - Non Repetitive (tp < 50μs) Drain Current - Continuous (TJ=150°C) - Pulsed (Note 1) PD Power Dissipation TJ , TSTG Operating and Storage Temperature Range RθJA Thermal Resistan...