INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3747
DESCRIPTION ·Good Linearity ...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3747
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470
APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80 V
VCEO Collector-Emitter Voltage
60 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
ICM Collector Current-Pulse
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature
10 A
25 W
2.0
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3747
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A
ICBO Collector Cutoff Current
VCB= 40V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
Switching times
ton Turn-on Time tstg Storage Time tf Fall Time
IC= 3A , IB1= -IB2= 0.15A; RL= 6.67Ω; VCC= 20V
MIN TYP. MAX UNIT 60 ...
